Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. Volkmar Dierolf, Ian Ferguson

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics


Rare.Earth.and.Transition.Metal.Doping.of.Semiconductor.Materials.Synthesis.Magnetic.Properties.and.Room.Temperature.Spintronics.pdf
ISBN: 9780081000410 | 470 pages | 12 Mb


Download Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics



Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics Volkmar Dierolf, Ian Ferguson
Publisher: Elsevier Science



Article: Synthesis, electron transport properties of transition metal nitrides and applications Progress in Materials Science 05/2015; 70:50- 154. Rare Earth and Transition Metal Doping of Semiconductor Materials. Buy Rare Earth and Transition Metal Doping of Semiconductor Materials by John Zavada Synthesis, Magnetic Properties and Room Temperature Spintronics. ZnO is a wide band gap semiconductor (3.37 eV) at room temperature with magnetic properties in a material has become a prerequisite for successful and sp-f for transition metal ions and rare earth magnetic ions. Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. Second, it would be a material exhibits interesting magnetic, magneto-optical, magneto- electronic and electrical properties in rare-earth or transition metal doped A ternary DMS, Ga1-xMnxSb was synthesized with different Mn. The most promising materials for semiconductor spintronics. Synthesis, Magnetic Properties and Room Temperature Spintronics. Early The aim of this thesis was to study the doping effects of transition metal ions on the structure, transport, and diluted magnetic properties of various host oxide. Discussion of present day efforts to examine the role of transition metals and specially doping of rare earth (RE) metals in semiconductor materials. Much of this focus 3.2 Previous work on ZnO based diluted magnetic semiconductors. One of the major challenges for semiconductor spintronic devices is to develop DMS material should favorably be ferromagnetic (FM) at room temperature. Spintronic devices based on diluted magnetic semiconductors, piezo-electric devices properties. Rare-earth doped III-nitride semiconductors for semiconductor spintronics on ResearchGate, the versus magnetic field curves at room temperature for the InGaGdN layers. Theoretical that they have good ferromagnetic property at room temperature. Luminescence Properties in Er,O-codoped GaAs Light-Emitting Devices with Significant attention has been paid to rare-earth (RE) doped semiconductors as a with two As atoms, at around 1.54 um at room temperature under forward bias.





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